Pubblicazioni

Articoli pubblicati su riviste internazionali

  1. Garzon E, De Rose R , Crupi F,  Trojman L, Finocchio G, Carpentieri M,Lanuzza M(2020). Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework. INTEGRATION, the VLSI journal, ISSN: 0167-9260, vol. 71, March 2020, pp.  56–69, doi: 10.1016/j.vlsi.2020.01.002
  2. De Rose R, D’Aquino M, Finocchio G, Crupi F, Carpentieri M, Lanuzza M(2019). Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers. IEEE TRANSACTIONS ON NANOTECHNOLOGY, ISSN: 1941-0085, vol. 18, issue 1, December 2019, pp. 1063 – 1070, doi: 10.1109/TNANO.2019.2945408
  3. Garzon E, De Rose R, Crupi F,  Trojman L, Lanuzza M (2019). Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework. MICROELECTRONIC ENGINEERING, ISSN: 0167-9317, vol. 215, article number 111009, July 2019, doi: 10.1016/j.mee.2019.111009
  4. G. Finocchio, T. Moriyama, R. De Rose, G. Siracusano, M. Lanuzza, V. Puliafito, S. Chiappini, F. Crupi, Z. Zeng, T. Ono, and M. Carpentieri (2020). Spin-orbit torque basedphysicalunclonablefunction. Journal of Applied Physics. Vol. 128, July 15, 2020, 033904. ISSN: 0021-8979.doi: 10.1063/5.0013408
  5. R. Tomasello B. Fang, P. Artemchuk, M. Carpentieri, L. Fasano, A. Giordano, O. V. Prokopenko, Z.M. Zeng, G. Finocchio, “Low-frequency nonresonant rectification in spin diodes”. Physical Review Applied (APS). Vol. 14(2), August 2020, pp. 024043-1-8. ISSN: 2331-7019. doi: 10.1103/PhysRevApplied.14.024043
  6. L. Zhang, J. Cai, B, Fang, B. Zhang, L. Bian, M. Carpentieri, G. Finocchio, and Z. Zeng, “Dual-band microwave detector based on magnetic tunnel junctions”. Applied Physics Letters, Vol. 117(7), August 2020, pp. 072409-1-5. ISSN: 0003-6951. doi: 10.1063/5.0014881
  7. V. Puliafito, R. De Rose, F. Crupi, S. Chiappini, G. Finocchio, M. Lanuzza, and M. Carpentieri, “Impact of Scaling on Physical Unclonable Function based on Spin-Orbit Torque”. IEEE Magnetic Letters. Vol. 11, September 2020, pp. 4505205-1-5. ISSN: 1949-307X. doi: 10.1109/LMAG.2020.3025263
  8. V. Puliafito, L. Sanchez-Tejerina, M. Carpentieri, B. Azzerboni, and G. Finocchio, “Modulation, injection locking, and pulling in an antiferromagnetic spin-orbit torque oscillator”. IEEE Transactions on Magnetics, Vol. 57(2), February 2021, pp. 4100106-1-6. ISSN: 0018-9464. doi: 10.1109/TMAG.2020.3014576

Articoli presentati in conferenze internazionali

  1. Garzon E, De Rose R , Crupi F, Lanuzza M (2019). Device-to-System Level Simulation Framework for STT-DMTJ Based Cache Memory. In: 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Genova, Italy; 27-29 Nov. 2019, doi: 10.1109/ICECS46596.2019.8965021
  2. Lanuzza M, De Rose R , Crupi F, Alioto M (2019). An Energy Aware Variation-Tolerant Writing Termination Control for STT-based Non Volatile Flip-Flops. In: 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Genova, Italy; 27-29 Nov. 2019, doi: 10.1109/ICECS46596.2019.8964742
  3. Garzon E, De Rose R , Crupi F,  Trojman L, Finocchio G, Carpentieri M, Lanuzza M (2019). Exploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs. In: 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), Lausanne; Switzerland; 15 -18 July 2019, pp. 1-4, doi: 10.1109/SMACD.2019.8795223